통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
ID41461DR
설명
RFHIC ID41461DR은 3700~4100MHz 대역에서 동작하는 GaN on SiC(질화갈륨) 고전자이동도 트랜지스터(HEMT)입니다. 48V 동작에서 포화 출력 468W를 제공하며 고효율·고선형성을 구현하도록 설계되었습니다. 내부 정합 구조로 5G NR 기지국 전력증폭기(PA) 설계에 적합합니다.
View Product Specification
WiMAX, 5G NR, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
제품 사양
| Min Freq.(MHz) | 3700MHz |
|---|---|
| Max Freq.(MHz) | 4100MHz |
| Typ Output Power(W) | 48W |
| Saturation Power(W) | 468W |
| Power Gain(dB) | 14.3dB |
| Efficiency | 50% |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
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