AB02AAGAB

설명

RFHIC’s AB02AAGAB is a 60W, DC–4 GHz, GaN on SiC RF power transistor designed for broadband amplifiers, WiMAX, LTE, WCDMA, and GSM applications. The AB02AAGAB is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing excellent thermal stability and high breakdown voltage.