H007C11B

설명

H007C11B is a 220W, GaN-on-SiC RF transistor designed for broadband amplifier, cellular infrastructure, and test instrumentation applications. The H007C11B provides 220W saturated output power with 55% drain efficiency at 48V across 2000MHz to 2500MHz. Its internally pre-matched push-pull configuration enables high-power broadband performance and simplified amplifier implementation, making it suitable for 2-way private radio, broadband, cellular, test instrumentation, and CW amplifier applications.