통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RIM281K2-20
설명
The RIM281K2-20 is a 1200W, GaN solid-state power amplifier designed for high power industrial, scientific, and medical (ISM)
applications. The solid-state power amplifier is operable from 2856 MHz and is built using RFHIC’s cutting edge gallium- nitride
(GaN) on SiC HEMT providing excellent efficiency and breakdown voltage.
The GaN Solid state Power Amplifier (SSPA) is suitable for use in pulse applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, microwave CVD and sintering.
Microwave Heating and Drying
RF & Microwave Cooking
Linear Accelerators
Plasma Lighting
Waste Management
Carbon Fiber Manufacturing
Microwave Assisted X-Ray Laser
Microwave Tumor Ablation
Bio & Health Science
Plasma Generation
제품 사양
| Max Freq.(MHz) | 2856MHz |
|---|---|
| Output Power(W) | 1200W |
| Efficiency | 45% |
| VDC(V) | 50 |
| VSWR | 6:1 |
| Cooling | Air |
| Dimension(mm) | 254(W) x 204(D) x 28(H) |
| Weight | 2kg |
| Interface | RS-232 |
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